EI8LC05 thru ei8lc15 low capacitance, bidirectional, monolithic tvs diode netw ork fea t ures 500 w a tts peak puls e pow e r ( t p = 8 x 20 s ) esd and t r ans ient pr otec tion f or data, s i gnal and vc c bus to iec 1000- 4- 2 ( f or m er l y iec 801- 2) pr otec ts up to 4 bi- dir ec tional lines standof f voltages f r om 5 to 15 v low c apac itanc e f or high s peed inter f ac es low c l am ping voltage esd pr otec tion >8k v descript ion t he ei8lc s er i es of m onolithic tr ans ient voltage s uppr es s or s ar e des igned f or applic ations w her e voltage tr ans ients , c aus ed by elec tr os tatic dis c har ge ( esd) and other induc ed voltage s ur ges , c an per m anently dam age voltage s ens itive c om ponents . t hes e t vs diodes ar e c har ac ter i z ed by their high s ur ge c apability , ex tr em ely f as t r es pons e tim e and low on- r es i s t anc e. t he ei8lc s er i es c ons is ts of bi- dir ec tional diode ar r ay s w i th low input c apac itanc es and is s pec if ic ally des igned to pr otec t m u ltiple or s i ngle data lines w i th eac h c hannel being elec tr ic ally independent f or m ultiple i/o por t pr otec tion. t hes e m onolithic diode ar r ay netw or k s c an be us ed to pr otec t c om binations of 8 unidir ec t ional or bi- d ir ec tional lines . t hey pr ovide esd and s ur ge pr otec tion f or s ens itive pow er and i/o por ts . t he 8lc s er i es t vs diode ar r ay w ill m eet the s ur ge and esd per iec 1000- 4- 2. a pplications esd & s ur ge pr otec tion f or pow er lines & i/o por ts t t l and mo s bus lines rs- 232, rs - 422 and rs- 485 data lines high s peed logic high s peed data & video tr ans m i s s i on m e cha nica l cha ra ct erist i cs available in 8 lead so ic and pdip solder tem per atur e : 265 c f or 10 s ec onds s c hematic ma x i mu m r a t i n g s r a tin g sym bo l val u e u n it p eak p ul s e p ow er (t p = 8 x 20 s ) p pk 300 w at t s operat i ng tem perat ure tj -55 t o +150 c s t orage tem perat ure ts t g -55 t o +150 c elect r ica l cha ra ct erist ics @ 25 c rev e rse stand- of f voltage min vbr @ 1m a max clam ping voltage @ipp=1a max clam ping voltage @ipp = 10a leak age cur r ent @ v rw m max . cap. @0v, 1mhz v rw m bv(m i n) vc vc i r cj volts volts volts volts m a pf EI8LC05cx 5 6 9.8 12.5 400 15 ei8lc08cx 8 8.5 13.4 16.6 10 15 ei8lc12cx 12 13.3 19.0 23.5 2 15 ei8lc15cx 15 16.7 25.5 29.5 2 15 not e : cl am pi ng vol t age val ues are bas ed upon an i ndus t r y s t andard 8 x 20 s peak pul s e c urrent (i pp) w avef orm . x = s f or so ic pac k age, x = p f or p- dip pac k ag 5 1 8 2 6 3 4 7
EI8LC05 thru ei8lc15 low capacitance, bidirectional, monolithic tvs diode netw ork
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